Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers
Identifieur interne : 00FB07 ( Main/Repository ); précédent : 00FB06; suivant : 00FB08Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers
Auteurs : RBID : Pascal:02-0019992Descripteurs français
- Pascal (Inist)
- 7847, 7855C, 7135, 7765L, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Superréseau semiconducteur, Spectre résolution temporelle, Photoluminescence, Silicium, Dopage semiconducteur, Recombinaison électron trou, Durée vie radiative, Déplacement vers le rouge, Exciton, Etat interface.
English descriptors
- KwdEn :
- Electron-hole recombination, Excitons, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Interface states, Photoluminescence, Radiative lifetimes, Red shift, Semiconductor doping, Semiconductor quantum wells, Semiconductor superlattices, Silicon, Time resolved spectra, Wide band gap semiconductors.
Abstract
The carrier recombination dynamics in a series of InxGa1-xN/GaN multiple quantum wells, nominally identical apart from different Si doping concentrations in the GaN barriers, was studied by time-resolved photoluminescence (PL) with excitation densities ranging from 220 nJ/cm2 to 28 μJ/cm2 at 10 K and 300 K. At early time delays and with excitation densities greater than 5 μJ/cm2, at which the strain-induced piezoelectric field is screened by both photogenerated carriers and electrons from the GaN barriers, we observe a strong InxGa1-xN PL peak initially located ∼60 meV below the absorption edge and well above an effective mobility edge. This peak decays quickly with an effective lifetime less than 70 ps and disappears into the extended states while it gradually redshifts. The amount of this PL peak redshift decreases with increasing Si doping in the GaN barriers, suggesting that the peak is due to radiative recombination of free excitons in the screened piezoelectric field.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Time-resolved photoluminescence of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum well structures: Effect of Si doping in the barriers</title><author><name sortKey="Choi, C K" uniqKey="Choi C">C. K. Choi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Kwon, Y H" uniqKey="Kwon Y">Y. H. Kwon</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Little, B D" uniqKey="Little B">B. D. Little</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Gainer, G H" uniqKey="Gainer G">G. H. Gainer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Chang, Y C" uniqKey="Chang Y">Y. C. Chang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name></author><author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name></author></titleStmt><publicationStmt><idno type="inist">02-0019992</idno><date when="2001-12-15">2001-12-15</date><idno type="stanalyst">PASCAL 02-0019992 AIP</idno><idno type="RBID">Pascal:02-0019992</idno><idno type="wicri:Area/Main/Corpus">010199</idno><idno type="wicri:Area/Main/Repository">00FB07</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron-hole recombination</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Photoluminescence</term><term>Radiative lifetimes</term><term>Red shift</term><term>Semiconductor doping</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Silicon</term><term>Time resolved spectra</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7847</term><term>7855C</term><term>7135</term><term>7765L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Spectre résolution temporelle</term><term>Photoluminescence</term><term>Silicium</term><term>Dopage semiconducteur</term><term>Recombinaison électron trou</term><term>Durée vie radiative</term><term>Déplacement vers le rouge</term><term>Exciton</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The carrier recombination dynamics in a series of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells, nominally identical apart from different Si doping concentrations in the GaN barriers, was studied by time-resolved photoluminescence (PL) with excitation densities ranging from 220 nJ/cm<sup>2</sup> to 28 μJ/cm<sup>2</sup> at 10 K and 300 K. At early time delays and with excitation densities greater than 5 μJ/cm<sup>2</sup>, at which the strain-induced piezoelectric field is screened by both photogenerated carriers and electrons from the GaN barriers, we observe a strong In<sub>x</sub>Ga<sub>1-x</sub>N PL peak initially located ∼60 meV below the absorption edge and well above an effective mobility edge. This peak decays quickly with an effective lifetime less than 70 ps and disappears into the extended states while it gradually redshifts. The amount of this PL peak redshift decreases with increasing Si doping in the GaN barriers, suggesting that the peak is due to radiative recombination of free excitons in the screened piezoelectric field.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>64</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Time-resolved photoluminescence of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum well structures: Effect of Si doping in the barriers</s1></fA08><fA11 i1="01" i2="1"><s1>CHOI (C. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>KWON (Y. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>LITTLE (B. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>GAINER (G. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>CHANG (Y. C.)</s1></fA11><fA11 i1="07" i2="1"><s1>KELLER (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>MISHRA (U. K.)</s1></fA11><fA11 i1="09" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080</s1></fA14><fA14 i1="03"><s1>Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s2>245339-245339-7</s2></fA20><fA21><s1>2001-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0019992</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The carrier recombination dynamics in a series of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells, nominally identical apart from different Si doping concentrations in the GaN barriers, was studied by time-resolved photoluminescence (PL) with excitation densities ranging from 220 nJ/cm<sup>2</sup> to 28 μJ/cm<sup>2</sup> at 10 K and 300 K. At early time delays and with excitation densities greater than 5 μJ/cm<sup>2</sup>, at which the strain-induced piezoelectric field is screened by both photogenerated carriers and electrons from the GaN barriers, we observe a strong In<sub>x</sub>Ga<sub>1-x</sub>N PL peak initially located ∼60 meV below the absorption edge and well above an effective mobility edge. This peak decays quickly with an effective lifetime less than 70 ps and disappears into the extended states while it gradually redshifts. 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